to-92 plastic-encapsulate transistors 2SC945 transistor (npn ) feature z excellent h fe linearity z low noise z complementary to a733 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current -continuous 150 ma p c collector power dissipation 400 mw t j junction temperature 125 t stg storage temperature -55-125 electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions m in typ max unit collector-base breakdown voltage v (br)cbo i c =1ma , i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =100 a , i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 v collector cut-off current i cbo v cb =60v, i e =0 0.1 collector cut-off current i ceo v ce =45v 0.1 emitter cut-off current i ebo v eb =5v ,i c =0 0.1 h fe(1) v ce =6v , i c =1ma 70 700 dc current gain h fe(2) v ce =6v , i c =0.1ma 40 collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma 0.3 v base-emitter saturation voltage v be(sat) i c =100ma, i b =10ma 1 v transition frequency f t v ce =6v,i c =10ma,f=30mhz 200 mhz collector output capacitance cob v cb =10v,i e =0,f=1mh z 3.0 pf noise figure nf v ce = 6v,i c =0.1 ma r g =10 k ? ,f=1 mh z 10 db classification of h fe(1) rank o y gr bl range 70-140 120-240 200-400 350-700 to-92 1.emitter 2.collector 3. base a a a a,jan,2011 , i b =0 tiger electronic co.,ltd
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